2SC1050 [Wing Shing]
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION); 硅外延平面型晶体管（概述）
| 型号： | 2SC1050 |
| 厂家： | 
WING SHING COMPUTER COMPONENTS |
| 描述： | Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
| 文件： | 总1页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Epitaxial Planar Transistor
2SC1050
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors in
a plastic envelope, primarily for use in audio and
general purpose
TO-3
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
PARAMETER
CONDITIONS
TYP
MAX
300
250
1
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
VBE = 0V
-
-
-
V
A
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
A
ICM
Ptot
VCEsat
VF
tf
-
-
-
1.5
Tmb 25
40
1.2
2.0
-
W
V
IC = 0.5A; IB = 0.1A
IF = 0.5A
V
Fall time
s
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
PARAMETER
CONDITIONS
MIN
MAX
300
250
5
UNIT
V
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
VBE = 0V
-
-
V
V
-
1
A
Base current (DC)
-
-
0.2
40
A
IB
Ptot
Total power dissipation
Tmb 25
W
Storage temperature
-55
-
150
150
Tstg
Tj
Junction temperature
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VCB=300V
TYP
-
MAX
0.2
UNIT
mA
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
VEB=5V
-
0.2
mA
IC=1mA
250
-
IC = 0.5A; IB =0.1A
IC = 0.3A; VCE = 5V
IC = 0.1A; VCE = 12V
VCB = 10V
1.2
V
30
5
200
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
-
-
MHz
pF
us
50
Cc
ton
Tum-off storage time
us
ts
Fall time
us
tf
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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